TI reveals industry's first 80-V half-bridge GaN FET module

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Mar 13 2015	TI reveals industry's first 80-V half-bridge GaN FET module
DALLAS, March 13, 2015 /PRNewswire/ -- Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a...


Source:http://www.prnewswire.com/news-releases/ti-reveals-industrys-first-80-v-half-bridge-gan-fet-module-300050124.html

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